 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FLM1011-15F X,Ku-Band Internally Matched FET FEATURES High Output Power: P1dB=42.0dBm(Typ.) High Gain: G1dB=7.0dB(Typ.) High PAE: add=31%(Typ.) Broad Band: 10.7~11.7GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM1011-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 57.7 -65 to +175 175 o Unit V V W C C o RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25C) Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VDS IGF IGR RG=50 RG=50 Condition Limit Unit V mA mA 10 16.7 -3.62 Limit Typ. 7.2 4500 -1.5 42.0 7.0 4.0 31 2.3 -45 ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr add G Rth Tch IM3 Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=4.55A VDS=5V, IDS=300mA IGS=-300uA VDS=10V f=10.7 - 11.7 GHz IDS=0.5Idss (typ) Zs=ZL=50 Min. -0.5 -5.0 41.0 6.0 -42 Max. 10.8 -3.0 5.0 1.2 2.6 100 - Unit A mS V V dBm dB A % dB o Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise 3rd Order Intermodulation Distortion Channel to Case 10V x Idsr x Rth f=11.7GHz, f=10MHz, 2-Tone Test Pout=30.0dBm S.C.L. C/W o C dBc CASE STYLE: IB ESD Edition 1.2 September 2004 G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level Class III 2000V~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k) 1 FLM1011-15F X,Ku-Band Internally Matched FET POWER DERATING CURVE 60 Output Power [dBm] Total Power Dissipation [W] OUTPUT POWER , POWER ADDED EFFICIENCY v.s. INPUT POWER Vds=10V, Ids=0.5Idss Freq=11.2GHz 44 42 40 38 36 34 32 30 Pout 70 60 50 40 PAE 50 40 30 20 10 0 0 50 100 150 200 Case Temperature [o C] 30 20 10 0 22 24 26 28 30 32 34 36 38 38 Input Power [dBm] OUTPUT POWER v.s. FREQUENCY Vds=10V, Ids=0.5Idss 44 Pin=36dBm -40 IMD v.s. OUTPUT POWER (S.C.L.) Vds=10V, Ids=3.6A f1=11.70GHz, f2=11.71GHz, 2-tone test 42 Intermodulation Distortion [dBc] -44 Output Power [dBm] 40 38 36 Pin=34dBm Pin=30dBm P1dB -48 IM3 -52 -56 Pin=26dBm 34 32 10.5 10.7 10.9 11.1 11.3 11.5 11.7 11.9 IM5 -60 -64 25 26 27 28 29 30 31 32 33 34 Frequency [GHz] Output Power (S.C.L.) [dBm] 2 Power Added Efficiency [%] FLM1011-15F X,Ku-Band Internally Matched FET S-PARAMETERS +50j +25j +100j +90 +10j 10.5 +250j 10.5 10.9 10.7 11.1 11.3 11.5 10.7 11.9 10 25 11.7 50 11.9 11.7 11.1 11.5 11.3 11.5 11.3 11.1 0 10.9 10.5 10.7 180 6 Scale for |S21| 10.9 11.1 11.3 10.7 11.5 10.5 11.7 11.9 11.7 11.9 0 -10j 10.9 -250j -25j -50j -100j S 11 S 22 Scale for | S 12 | 0.6 -90 S 21 S 12 VDS=10V , IDS=0.5Idss Freq. (G H z) 10. 5 10. 6 10. 7 10. 8 10. 9 11. 0 11. 1 11. 2 11. 3 11. 4 11. 5 11. 6 11. 7 11. 8 11. 9 M AG 0. 580 0. 543 0. 505 0. 465 0. 428 0. 389 0. 359 0. 334 0. 325 0. 325 0. 338 0. 359 0. 383 0. 415 0. 445 S 11 ANG 62. 4 51. 5 39. 9 26. 8 11. 9 -5. 2 -23. 9 -45. 5 -67. 6 -90. 9 -113. 1 -134. 2 -154. 1 -172. 6 169. 3 M AG 2. 199 2. 241 2. 289 2. 328 2. 380 2. 419 2. 453 2. 476 2. 472 2. 466 2. 446 2. 403 2. 367 2. 312 2. 243 S 21 ANG 163. 7 152. 6 142. 1 131. 0 119. 8 108. 3 96. 2 84. 4 72. 1 59. 6 47. 2 34. 3 21. 8 9. 1 -4. 3 M AG 0. 061 0. 067 0. 072 0. 078 0. 084 0. 089 0. 092 0. 095 0. 097 0. 099 0. 100 0. 100 0. 099 0. 096 0. 095 S 12 ANG 143. 2 131. 7 121. 5 109. 7 98. 9 87. 5 75. 7 64. 1 51. 7 40. 7 28. 0 16. 9 6. 5 -4. 4 -15. 8 M AG 0. 438 0. 439 0. 442 0. 446 0. 440 0. 426 0. 406 0. 378 0. 342 0. 298 0. 250 0. 201 0. 158 0. 128 0. 121 S 22 ANG -10. 3 -21. 9 -33. 2 -44. 2 -54. 3 -64. 2 -73. 5 -81. 8 -88. 4 -93. 3 -95. 3 -95. 0 -88. 3 -74. 1 -52. 5 3 FLM1011-15F X,Ku-Band Internally Matched FET Package Out Line Case Style : IB Unit : mm PIN ASSIGNMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE 4 FLM1011-15F X,Ku-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. TEL +81-45-853-8156 FAX +81-45-853-8170 5 |
Price & Availability of FLM1011-15F
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |